MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQD5P10TM


MOSFET 100V P-Channel QFET
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ON Semiconductor 6
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AUD 2.2487
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3.6 A100 V1.05 OhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252ReelSi1 Channel30 V Enhancement  
TK72E12N1,S1X(S


Transistor: N-MOSFET; unipolar; 120V; 72A; 255W; TO220AB
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Toshiba 6
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AUD 2.3289
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IRFS4620PBF-VB


200V 40A 48m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 6
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AUD 2.6009
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VBM1151N


MOSFET N Channel 150V 100A 5V @ 250uA 8.5mO @ 100A,10V TO-220AB RoHS
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VBsemi Elec 6
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AUD 2.4703
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SQJA38EP-T1_GE3


MOSFET Automotive N-Channel 40 V D-S 175C MOSFET
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Vishay 6
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AUD 2.6398
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60 A40 V6.7 mOhmsN - Channel 1.4 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V48.2 nCEnhancementAEC - Q101PowerPAK
P82F7R5SN-5600


MOSFET EETMOS series Power MOSFET Through Hole
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Shindengen 6
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AUD 2.8418
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            EETMOS3      
IPB140N08S404ATMA1


MOSFET N-CHANNEL 7580V
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Infineon 6
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AUD 2.9388
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   N - Channel     Smd/SmtTO - 263 - 7Cut TapeSi1 Channel   Aec - Q101 
IPA65R660CFD


Infineon Technologies MOSFET N-Ch 700V 6A TO220FP CoolMOS CFD2
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Infineon 6
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AUD 3.2408
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6 A650 V660 mOhmsN - Channel  - 55 C+ 150 C27.8 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V22 nCEnhancement Coolmos
IRFP4710PBF-VB


100V 72A 18mΩ@10V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 6
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AUD 3.2489
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SI7113ADN-T1-GE3


MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
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Vishay 0
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AUD 0.3554
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10.8 A100 V186 mOhmsP - Channel 1.1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V5.65 nC   
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