MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMTH84M1SPSQ-13


MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K
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Diodes Incorporated 7
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AUD 3.716
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RS1E281BNTB1


N-Channel 30 V 28A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
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ROHM 7
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AUD 3.7609
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80 A30 V2.3 mOhmsN - Channel 1 V- 55 C+ 150 C30 WSmd/SmtHSOP - 8Cut TapeSi1 Channel20 V94 nCEnhancement  
FDD86567_F085


MOSFET MV7 60/20V 1000A N-channel PowerTrench MOSFET
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ON Semiconductor 7
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AUD 4.2573
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100 A60 V6 mOhmsN - Channel 2 V- 55 C+ 175 C227 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V63 nCEnhancementAEC - Q101PowerTrench
IXFP12N65X2


MOSFET 650V/12A TO-220
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IXYS 7
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AUD 4.3275
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12 A650 V310 mOhmsN - Channel 3 V- 55 C+ 150 C180 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V18.5 nCEnhancement Hiperfet
SIS476DN-T1-GE3


MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV
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Vishay 7
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AUD 4.4459
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40 A30 V2.05 mOhmsN - Channel 1 V- 55 C+ 150 C52 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 16 V , 20 V77 nCEnhancement TrenchFET, PowerPAK
SIHB25N50E-GE3


MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
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Vishay 7
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AUD 4.5904
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26 A550 V145 mOhmsN - Channel 4 V- 55 C+ 150 C250 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V57 nCEnhancement  
HC2M0080120D


TO-247-3L SiC MOSFETs ROHS
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HXY MOS 7
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AUD 5.0039
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SIHG22N60E-GE3


Vishay Semiconductors MOSFET 600V 180mOhm10V 21A N-Ch E-SRS
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Vishay 7
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AUD 5.3091
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21 A600 V180 mOhmsN - Channel20 V4 V- 55 C+ 150 C227 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V86 nCEnhancement E Series
IQE050N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 7
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AUD 5.4534
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RJ1L10BBGTL1


MOSFETs Nch 60V 240A, TO-263AB, Power MOSFET
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ROHM 4
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AUD 4.8761
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240 A60 V1.85 mOhmsN - Channel 2.5 V- 55 C+ 150 C192 WSMD/SMTTO - 263AB - 3Reel , Cut TapeSi1 Channel20 V160 nCEnhancement  
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