MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRFR4620TRPBF-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 7
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AUD 2.0373
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IPA60R160P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
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Infineon 7
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AUD 2.0522
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            Coolmos P6      
IRLB3036PBF-VB


60V 270A 1.6mΩ@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 7
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AUD 2.0542
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ISZ0702NLSATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 7
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AUD 2.0602
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SP010N02GHTF


100V 300A 1.7m 1 N-Channel TO-247 MOSFETs ROHS
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Siliup 7
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AUD 2.1743
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IRF640STRLPBF-VB


200V 40A 48m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 7
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AUD 2.2771
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FDS2672


Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8
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ON Semiconductor 7
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AUD 2.3897
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            Ultrafet®      
IXTP10P15T


MOSFET TenchP Power MOSFET
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IXYS 7
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AUD 2.5701
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10 A150 V350 mOhmsP - Channel     Through HoleTO - 220 - 3TubeSi      
IRFS4321PBF-VB


150V 11m@10V 3V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 7
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AUD 2.6009
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STP12NK80Z


Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO220-3
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STMicroelectronics 7
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AUD 2.591
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10.5 A800 V750 mOhmsN - Channel  - 55 C+ 150 C190 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V Enhancement SuperMESH
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