MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS890DN-T1-GE3-VB


QFN-8(3x3) MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.2482
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AOB282L-VB


80V 120A 0.005@10V,120A 125W 4V@250uA TO-263 MOSFETs ROHS
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AUD 1.2482
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SQSA80ENW-T1_GE3-VB


QFN-8(3.3x3.3) MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.2482
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VBN1806


80V 6m@10V 1PCSNChannel TO-262 MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.2482
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2SJ292-VB


TO-220AB MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.1993
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FDMS86500L-VB


60V 3mΩ@10V 2V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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AUD 1.2801
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IPD60R360P7S-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.2891
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SIA537EDJ-T1-GE3


Mosfet Array N and P-Channel 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
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Vishay 9
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AUD 1.2932
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4.5 A12 v , - 20 V75 mOhmsN And P - Channel8 V1 V- 55 C+ 150 C7.8 WSmd/SmtSC - 70 - 6ReelSi2 Channel8 V10.5 nC , 16.3 nCEnhancement Trenchfet
IRFH5010TRPBF


N-Channel 100 V 13A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)
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Infineon 9
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AUD 1.2937
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100 A100 V9 mOhmsN - Channel 4 V- 55 C+ 150 C250 WSmd/SmtPQFN - 8ReelSi1 Channel20 V65 nCEnhancement  
CS3205B8-VB


60V 120A 5m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.3016
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