MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MS8N100FT


1kV 8A 167W 1.8@10V,4A 5V@250A 1 N-Channel TO-220 MOSFETs ROHS
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MASPOWER 9
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AUD 1.1932
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HM30P55-VB


TO-220AB MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.1993
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07N60S5 TO263-VB


650V 800m@10V 3.5V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.1993
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TK4A60DB(S4PHI,X,S


TK4A60DB(S4PHI,X,S
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Toshiba 9
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AUD 1.2041
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CSD18534Q5A-VB


DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.1558
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AOB288L-VB


TO-263 MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.1558
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GT68N12T


TO-220 MOSFETs ROHS
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GOFORD 9
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AUD 1.2335
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NTP6412ANG


N-Channel 100 V 58A (Tc) 167W (Tc) Through Hole TO-220
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ON Semiconductor 9
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AUD 1.2428
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58 A100 V18.2 mOhmsN - Channel20 V - 55 C+ 175 C167 WSmd/SmtD2PAK - 2        
TPA65R260M


650V 15A 240mO@10V,7.5A 32W N Channel TO-220F-3 MOSFETs ROHS
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UNIGROUP 9
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AUD 1.2434
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STI6N80K5


STMicroelectronics MOSFET
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STMicroelectronics 6
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AUD 1.239
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4.5 A800 V1.6 Ohmsn - channel 4 V- 55 C+ 150 C110 Wthrough holeTO - 262 - 3Reelsi1 channel+/- 30 V7.5 nCenhancement mdmesh
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