MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB8N65M5


Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK
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STMicroelectronics 11
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AUD 2.8418
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            Supermesh      
NTE2396A


Transistor: N-MOSFET; 100V; 33A; TO220
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NTE 11
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AUD 2.8836
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VBL2157N


150V 65m@10V 1PCSPChannel TO-263 MOSFETs ROHS
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VBsemi Elec 11
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AUD 3.0851
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ASW60R090EFD


650V 47A 90m 391W 4V TO-247-3L MOSFETs ROHS
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ANHI 11
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AUD 3.373
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SI4401BDY-T1-GE3


MOSFET 40V 10.5A 2.9W 14mohm @ 10V
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Vishay 11
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AUD 3.3766
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10.5 A 14 mOhmsP - Channel 1 V- 55 C+ 150 C2.9 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel- 10 V40 nCEnhancement Trenchfet
VBGL1102


100V 180A 2m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 11
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AUD 3.8967
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VNP20N07-E


Driver; low-side switch; 20A; 83W; Channels:1; TO220-3; 70V
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STMicroelectronics 11
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AUD 4.2672
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             1     
QCPL-A58JV-500E


SO-16-300mil MOSFETs ROHS
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Broadcom 11
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AUD 4.4143
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MS30N90ICE0


900V 30A TO-263 MOSFETs ROHS
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MASPOWER 11
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AUD 4.6013
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IPP016N08NF2SAKMA1


MOSFET TRENCH 40<-<100V
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Infineon 11
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AUD 4.8024
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196 A80 V1.6 mOhmsN - Channel 3.8 V- 55 C+ 175 C300 WThrough Hole TubeSi1 Channel- 20 V , + 20 V170 nCEnhancement  
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