MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7324TRPBF


MOSFET 2 P Channel (Dual) 20V 9A 1V @ 250uA 18 mΩ @ 9A,4.5V SOIC-8_150mil RoHS
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Infineon 18
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AUD 2.1783
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9 A20 V18 mOhmsP - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel12 V42 nC   
IRF2804STRLPBF


N-Channel 40 V 75A (Tc) 300W (Tc) Surface Mount D2PAK
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Infineon 12
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AUD 1.7627
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270 A40 V2 mOhmsN - Channel 4 V + 175 C300 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel 240 nC   
STB100N10F7-VB


100V 5mΩ@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 11
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AUD 1.7582
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BSC031N06NS3 G-VB


DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 11
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AUD 1.841
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VBQA2157N


150V 65m@10V 1PCSPChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 11
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AUD 1.9766
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JCS50N20WT


TO-247-3 MOSFETs ROHS
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Jilin 11
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AUD 1.9857
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TK14A65W,S5X


MOSFET MOSFET NChannel 0.22ohm DTMOS
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Toshiba 11
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AUD 2.4463
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13.7 A650 V220 mOhmsN - Channel30 V2.5 v to 3.5 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3 Si1 Channel30 V35 nCEnhancement Dtmosiv
DMTH8012LK3Q-13


Trans MOSFET N-CH 80V 50A 3-Pin TO-252 T/R
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Diodes Incorporated 11
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AUD 2.5251
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         Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
BSC010N04LST


MOSFET TRENCH <= 40V
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Infineon 11
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AUD 2.5555
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BSC900N20NS3 G-VB


200V 30A 38m@10V 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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VBsemi Elec 6
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AUD 2.6452
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