MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFK64N60Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A
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IXYS 12
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AUD 27.1851
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64 A600 V95 mOhmsn - channel    1.25 kWthrough holeTO - 264 - 3Tubesi1 channel30 V190 nC  hiperfet
B1M080120HK


Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; TO247-4
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BASiC Semiconductor 12
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AUD 31.2597
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            SiC      
IXFR230N20T


MOSFET GigaMOS Power MOSFET
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IXYS 12
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AUD 40.6209
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156 A200 V8 mOhmsn - channel     through holeTO - 247 - 3Tubesi     hiperfet
IXTK17N120L


MOSFET 17 Amps 1200V
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IXYS 12
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AUD 98.2524
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17 A1.2 kV990 mOhmsn - channel 5 V- 55 C+ 150 C700 Wthrough holeTO - 264 - 3Tubesi1 channel30 V270 nCenhancement  
2N7002AQ-13


MOSFET 2N7002 Family
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Diodes Incorporated 11
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AUD 0.0731
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180 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V EnhancementAec - Q101 
BSS84DW-7-F


50V 130mA 300mW 10O@5V,100mA 2 P-Channel SOT-363-6(SC-70-6) MOSFETs ROHS
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Diodes Incorporated 11
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AUD 0.1487
Multiples of: 3000

130 mA50 V10 OhmsP - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel5 V Enhancement  
NP108N03D6-G


PDFN5x6-8L-A MOSFETs ROHS
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NATLINEAR 11
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AUD 0.1858
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DMN3021LFDF-7


MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K
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Diodes Incorporated 11
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AUD 0.2036
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         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
CS4N60A8HD


MOSFET N Trench 600V 4A (Tc) 4V @ 250uA 2.3 O @ 2A,10V TO-220 (TO-220-3) RoHS
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Huajing 11
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AUD 0.2694
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           Tube - Packed       
UT6MA3TCR


MOSFET 20V Nch+Pch Si MOSFET
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ROHM 11
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AUD 0.2932
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5.5 A , 5 A20 V30 mOhms , 42 mOhmsN - Channel, P - Channel 500 mV , 1.5 V- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel8 V4 nC , 6.5 nCEnhancement  
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