MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFD5C462NLWFT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor 14
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AUD 5.5596
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84 A , 84 A40 V3.9 mOhms , 3.9 mOhmsN - Channel 1.2 V- 55 C+ 175 C50 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V23 nC , 23 nCEnhancementAec - Q100 
EPC2034C


200V 48A 8m@20A,5V 2.5V@7mA 1 N-Channel MOSFETs ROHS
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TDK 13
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AUD 21.4638
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FCP130N60


Fairchild Semiconductor MOSFET
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ON Semiconductor 12
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AUD 5.2537
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28 A600 V130 mOhmsN - Channel 3.5 V- 55 C+ 150 C278 WThrough HoleTO - 220 - 3TubeSi1 Channel20 v , 30 V54 nC  Superfet Ii
HC3M0060065K


TO-247-4L SiC MOSFETs ROHS
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HXY MOS 12
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AUD 6.5757
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WMK110N20HG2


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 12
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AUD 7.3761
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ALD210800ASCL


MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY
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Advanced Linear Devices 12
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AUD 8.7015
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70 mA10 V25 OhmsN - Channel 10 mV0 C+ 70 C500 mW (1/2 w)Smd/SmtSOIC - 16TubeSi4 Channel10.6 V Depletion  
IPW60R190E6FKSA1


Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
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Infineon 12
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AUD 9.4206
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            Coolmos E6      
NP100P06PDG-E1-AY


Trans MOSFET P-CH 60V 100A Automotive 3-Pin(2+Tab) TO-263 T/R
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Renesas 12
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AUD 10.7772
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100 A  p    1.8 Wsurface mount Tape And Reel    enhancement  
IPW60R031CFD7


Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
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Infineon 12
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AUD 14.3134
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            Optimos      
IXFH6N120


MOSFET 6 Amps 1200V 2.4 Rds
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IXYS 12
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AUD 17.0299
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6 A1.2 kV2.6 OhmsN - Channel  - 55 C+ 150 C300 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement Hyperfet
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