MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP140P05T


MOSFET -140 Amps -50V 0.008 Rds
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IXYS 198
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AUD 10.3642
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140 A50 V9 mOhmsp - channel 2 V- 55 C+ 150 C298 Wthrough holeTO - 220AB - 3Tubesi1 channel10 V200 nCenhancement trenchp
STL19N60M2


MOSFET N-channel 600 V 0.278 Ohm typ. 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
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STMicroelectronics 13
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AUD 4.423
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11 A600 V278 mOhmsN - Channel 2 V- 55 C+ 150 C90 WSmd/SmtPowerflat - 8X8 - HV - 5Cut TapeSi1 Channel25 V21.5 nCEnhancement Mdmesh
STW15NK90Z-VB


900V 20A 270m@10V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 13
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AUD 5.7276
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NTE2975


Transistor: N-MOSFET; 55V; 53A; TO220
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NTE 13
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AUD 7.3343
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IXFA24N60X


MOSFET DiscMSFT NCh UltrJnctn XClass TO-263D2
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IXYS 13
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AUD 8.003
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24 A600 V175 mOhmsN - Channel 2.5 V- 55 C+ 150 C400 WSmd/SmtTO - 263 - 3 Si1 Channel30 V47 nCEnhancement Hiperfet
IXFP60N25X3M


MOSFET 250V/60A Ultra Junct ion X3-Class MOSFET
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IXYS 13
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AUD 10.5731
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60 A250 V19 mOhmsN - Channel 2.5 V- 55 C+ 150 C320 WThrough HoleTO - 220AB - 3TubeSi1 Channel20 V50 nCEnhancement Hiperfet
IXFQ90N20X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-3P (3)
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IXYS 13
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AUD 13.791
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           Tube      Hiperfet
IXFT50N60X


MOSFET DiscMSFT NCh UltrJnctn XClass TO-268AA
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IXYS 13
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AUD 18.6388
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50 A600 V73 mOhmsN - Channel 2.5 V- 55 C+ 150 C660 WSmd/SmtTO - 268 - 3 Si1 Channel30 V116 nCEnhancement Hiperfet
IXFX220N17T2


MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET
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IXYS 13
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AUD 21.1672
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220 A170 V6.3 mOhmsn - channel     through holeTO - 247 - 3Tubesi     hiperfet
IXFH100N30X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 13
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AUD 21.3761
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           Tube      Hiperfet
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