MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJA90EP-T1_GE3


MOSFET N-Channel 80V PowerPAK SO-8L
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Vishay 18
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 2.2541

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60 A80 V6.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V55 nCEnhancementAec - Q101Trenchfet
R6020ENJTL


ROHM Semiconductor MOSFET
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ROHM 13
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between Tue. 25 Aug to Thu. 27 Aug
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AUD 2.2164

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20 A600 V170 OhmsN - Channel 2 V- 55 C+ 150 C231 WSmd/SmtTO - 263 - 3Tape And ReelSi1 Channel30 V60 nCEnhancement  
SE150110G


MOSFET N Trench 150V 110A 4V @ 250uA 7.8 mΩ @ 55A,10V TO-263-2 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SINO-IC 13
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 1.4971

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TK15A50D-VB


650V 20A 160m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 13
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 2.858

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FDP20N50-VB


650V 20A 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 13
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 2.8914

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FDP61N20-VB


200V 80A 17m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 13
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 3.1241

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VBE165R20S


650V 20A 160m@10V 4V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 13
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 3.2553

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CSD16570Q5BT


N-Channel 25 V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 13
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 3.3823

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456 A25 V590 uOhmsn - channel 1.5 V- 40 C+ 85 C195 Wsmd/smtVSON - 8Reelsi1 channel20 V192 nC  nexfet
NVMFS5C612NT1G


MOSFETs NFET SO8FL 60V 235A 15MO
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ON Semiconductor 13
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between Tue. 25 Aug to Thu. 27 Aug
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AUD 3.5299

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225 A60 V1.65 mOhmsN - Channel 4 V- 55 C+ 175 C167 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement  
DMTH6005LK3Q-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 8
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between Wed. 02 Sep to Mon. 07 Sep
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AUD 2.3702

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         Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
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