MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ALD212908SAL


Advanced Linear Devices MOSFET Dual N-Ch Matched Pr VGS=0.0V
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Advanced Linear Devices 17
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AUD 6.9423
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79 mA10 V14 Ohmsn - channel10.6 V0.8 V0 C+ 70 C500 mWsmd/smtSOIC - 8Tubesi2 channel10.6 V enhancement epad
STW34NM60N


Transistor: N-MOSFET; unipolar; 600V; 20A; 250W; TO247
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STMicroelectronics 17
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AUD 7.2902
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            mdmesh      
NVMFS6H800NT1G


MOSFET TRENCH 8 80V NFET
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ON Semiconductor 17
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AUD 10.3116
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203 A80 V2.1 mOhmsN - Channel 2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V85 nCEnhancement  
STB20NM50T4


STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp
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STMicroelectronics 17
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AUD 11.5453
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20 A500 V250 mOhmsn - channel30 V - 65 C+ 150 C192 Wsmd/smtD2PAK - 3Reelsi1 channel30 V enhancement  
IPB180N10S403ATMA1


MOSFET N-CHANNEL_100+
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Infineon 17
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AUD 12.7541
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   N - Channel     Smd/SmtTO - 263 - 7Cut TapeSi1 Channel   Aec - Q101 
IXFK102N30P


MOSFET 102 Amps 300V 0.033 Rds
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IXYS 17
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AUD 15.8784
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102 A300 V33 mOhmsN - Channel 5 V- 55 C+ 150 C700 WThrough HoleTO - 264 - 3TubeSi1 Channel20 V224 nCEnhancement Hiperfet
IXFH70N30Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A
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IXYS 17
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AUD 18.7851
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70 A300 V54 mOhmsN - Channel    830 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V98 nC  Hiperfet
IXTR40P50P


MOSFET -22.0 Amps -500V 0.260 Rds
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IXYS 17
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AUD 22.3373
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22 A500 V260 mOhmsp - channel     through holeTO - 247 - 3Tubesi      
IXFL82N60P


MOSFET 82 Amps 600V 0.78 Ohm Rds
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IXYS 17
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AUD 24.0925
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82 A600 V78 mOhmsn - channel 5 V- 55 C+ 150 C625 Wthrough holeTO - 264 - 3Tubesi1 channel30 V240 nCenhancement hiperfet
IXFJ26N50P3


Trans MOSFET N-CH 500V 14A
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IXYS 17
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AUD 26.5306
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