MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SiSA26DN-T1-GE3


MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
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Vishay 17
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AUD 1.8634
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60 A25 V2.15 mOhmsN - Channel 1 V- 55 C+ 150 C39 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel- 12 v , 16 V44 nCEnhancement  
STF100N10F7-VB


100V 3.8m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 17
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AUD 2.2273
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IXTP60N10T


MOSFET MOSFET Id60 BVdass100
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IXYS 17
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AUD 2.3149
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60 A100 V18 mOhmsN - Channel  - 55 C+ 175 C176 WThrough HoleTO - 220 - 3TubeSi1 Channel  Enhancement Hiperfet
SI4896DY-T1-GE3


Vishay Semiconductors MOSFET 80V 9.5A 3.1W 16.5mohm 10V
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Vishay 17
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AUD 2.7981
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9.5 A80 V16.5 mOhmsN - Channel20 V2 V- 55 C+ 150 C3.1 WSmd/SmtSO - 8ReelSi  34 nC  Trenchfet
UF460L-T47-T


MOSFET N Trench 500V 21A 4V @ 250uA 270 mO @ 14A,10V TO-247 (AC) RoHS
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Unisonic 17
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AUD 3.4413
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IAUMN08S5N013GAUMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 17
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AUD 3.7597
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350 A80 V1.3 mOhmsN - Channel 3.8 V- 55 C+ 175 C307 WSMD/SMTPG - HSOG - 4 - 1Reel , Cut TapeSi1 Channel- 20 V , + 20 V138 nCEnhancement  
WMM38N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 38A; 277W
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Wayon 17
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AUD 3.991
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            Sj - Mosfet C2      
TK18A50D(STA4,X,M)


TO-220F-3 MOSFETs ROHS
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Toshiba 17
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AUD 4.1572
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STW28NM50N


Transistor: N-MOSFET; unipolar; 500V; 13A; 150W; TO247
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STMicroelectronics 17
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AUD 4.3254
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21 A500 V158 mOhmsN - Channel 4 V- 55 C+ 150 C150 WThrough HoleTO - 247 - 3TubeSi1 Channel- 25 V , 25 V50 nCEnhancement MDmesh
DMTH10H1M7STLWQ-13


MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
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Diodes Incorporated 17
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AUD 4.5572
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