MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH16N90Q-VB


900V 20A 270m@10V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 19
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AUD 6.6942
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ALD210808PCL


MOSFET Quad N-Ch Matched Pr VGS=0.0V
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Advanced Linear Devices 19
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AUD 7.3224
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70 mA10 V25 OhmsN - Channel 800 mV0 C+ 70 C500 mW (1/2 w)Through HolePDIP - 16TubeSi4 Channel10.6 V Enhancement Epad
SiHP065N60E-VB


600V 41A 62mΩ@10V 4.5V 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 19
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AUD 8.2854
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IXFA20N85XHV


MOSFET 850V Ultra Junction X-Class Pwr MOSFET
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IXYS 19
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AUD 8.8328
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20 A850 V330 mOhmsn - channel 3.5 V- 55 C+ 150 C540 Wsmd/smtTO - 263 - 3Tubesi1 channel30 V63 nCenhancement hiperfet
STW120NF10


100V 110A 312W 10.5mO@10V,60A N Channel TO-247-3 MOSFETs ROHS
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STMicroelectronics 19
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AUD 9.0454
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110 A100 V9 mOhmsN - Channel  - 55 C+ 175 C312 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Stripfet
G2R1000MT17J


N-Channel 1700V 3A (Tc) 54W (Tc) Surface Mount TO-263-7
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GeneSiC Semiconductor 19
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AUD 10.1134
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5 A1.7 kV1 OhmsN - Channel 4.5 V- 55 C+ 175 C44 WSMD/SMTTO - 263 - 7TubeSiC1 Channel- 5 V , + 20 V11 nCEnhancement  
IPT60R022S7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 19
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AUD 11.394
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WMJ80N65C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
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Wayon 19
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AUD 11.8896
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            WMOS C4      
STW56N65M2


STMicroelectronics MOSFET
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STMicroelectronics 19
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AUD 12.0358
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49 A650 V49 mOhmsn - channel 2 V + 150 C358 Wthrough holeTO - 247 - 3Reelsi1 channel25 V93 nCenhancement mdmesh
IPW65R037C6FKSA1


Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
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Infineon 19
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AUD 13.7418
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