MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MS6N150HGC0


TO-247 MOSFETs ROHS
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MASPOWER 19
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AUD 4.2898
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IXTP60N20T


TO-220-3 MOSFETs ROHS
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Littelfuse 19
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AUD 3.245
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IPA60R120P7-VB


600V 25A 120m@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 19
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AUD 4.7824
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NTMFSC004N08MC


ON Semiconductor 80V PTNG IN 5X6 DUALCOOL
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ON Semiconductor 19
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AUD 4.8902
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136 A80 V4 mOhmsN - Channel 4 V- 55 C+ 150 C127 WSMD/SMTDFN - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V43.4 nCEnhancement  
VBP18R20SFD


800V 20A 205m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 19
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AUD 5.1921
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IPD85P04P407ATMA1


Infineon Technologies MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
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Infineon 19
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AUD 5.2183
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- 85 A- 40 V5.3 mOhmsp - channel - 3 V- 55 C+ 175 C88 Wsmd/smtTO - 252 - 3Reel-1 channel+/- 20 V69 nCenhancementaec - q101 
SUM110N10-09-E3


MOSFET 100V 110A 375W
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Vishay 19
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AUD 5.2657
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110 A100 V9.5 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel10 V110 nCEnhancement Trenchfet
TK099N60Z1,S1F


MOSFETs N-ch MOSFET, 600 V, 0.099 ohma.10V, TO-247, DTMOS?
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Toshiba 19
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AUD 5.441
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25 A600 V99 mOhmsN - Channel   + 150 C176 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V36 nCEnhancement  
ALD1107SBL


MOSFET Quad P-Channel Array
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Advanced Linear Devices 19
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AUD 5.6642
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2 mA12 V1.2 kOhmsP - Channel 400 mV0 C+ 70 C500 mW (1/2 w)Smd/SmtSOIC - 14TubeSi4 Channel- 10.6 V Enhancement  
HC3M0075120D


TO-247-3L SiC MOSFETs ROHS
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HXY MOS 19
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AUD 6.3085
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