MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRFR4620TRL


MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms
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Infineon 24
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AUD 6.6084
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STD100N3LF3


STMicroelectronics MOSFET N Ch 30V 0.0045 Ohm 80A
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STMicroelectronics 23
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AUD 3.1191
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80 A30 V5.5 mOhmsN - Channel20 V - 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V EnhancementAec - Q101Stripfet
TSK82N25M


250V 82A 0.035O null TO-247-3 MOSFETs ROHS
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Truesemi 23
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AUD 3.7705
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SPB21N50C3-VB


650V 20A 190m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 23
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AUD 3.8265
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IPA65R190CFD


MOSFET CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
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Infineon 23
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AUD 3.8698
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17.5 A650 V190 mOhmsN - Channel 4 V  34 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel30 V68 nC  Coolmos
STW75NF30-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 23
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AUD 4.0546
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IRFP4232PBF-VB


TO-247AC MOSFETs ROHS
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VBsemi Elec 23
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AUD 4.5197
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TK31E60W,S1VX


Toshiba MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
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Toshiba 23
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AUD 5.75
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30.8 A600 V73 mOhmsn - channel 2.7 v to 3.7 V- 55 C+ 150 C230 Wthrough holeTO - 220 - 3Reelsi1 channel30 V86 nCenhancement dtmosiv
C2M0045170D


TO-247-3 MOSFETs ROHS
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FUXINSEMI 23
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AUD 53.3216
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IXTA08N100D2HV


MOSFET DiscMosfet N-CH Depl Mode-D2 TO-263D2
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IXYS 18
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AUD 4.1045
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800 mA1 kV21 Ohmsn - channel 2 V- 55 C+ 150 C60 Wsmd/smtTO - 263HV - 2Tubesi1 channel20 V14.6 nCdepletion  
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