MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VBL1208N


TO-263 MOSFETs ROHS
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VBsemi Elec 23
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AUD 1.7328
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SUD19N20-90-T4-E3-VB


200V 25A 54m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 23
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AUD 1.7379
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CSD18534Q5AT


MOSFET 60V,N-Ch NexFET Pwr MOSFET
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Texas Instruments 23
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AUD 1.7429
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50 A60 V9.8 mOhmsN - Channel 1.5 V- 55 C+ 150 C77 WSmd/SmtVSONP - 8Cut TapeSi1 Channel20 V22 nCEnhancement Nexfet
TSK65R099


TO-247 MOSFETs ROHS
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Truesemi 23
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AUD 2.0798
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Hot IRFIBF20GPBF


MOSFET RECOMMENDED ALT 844-IRFIBF20GPBF
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Vishay 23
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AUD 2.1104
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         Through HoleTO - 220 - 3TubeSi      
IRFB31N20DPBF-VB


200V 40A 60m@10V,40A 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 23
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AUD 2.2771
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IXTP110N055T2


MOSFET 110 Amps 55V 0.0066 Rds
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IXYS 23
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AUD 2.5119
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110 A55 V6.6 mOhmsN - Channel  - 55 C+ 175 C180 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Hiperfet
IPP075N15N3-G-VB


150V 100A 8.5m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 23
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AUD 2.5791
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SI4904DY-T1-E3


MOSFET 40V 8.0A 3.25W
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Vishay 23
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AUD 2.622
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
R6014YNXC7G


MOSFET 600V 9AR MOSFET
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ROHM 23
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AUD 2.709
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14 A600 V260 mOhmsN - Channel 6 V- 55 C+ 150 C54 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 30 V , 30 V20 nCEnhancement  
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