MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQD40061EL_GE3


MOSFET -40V Vds 20V Vgs DPAK (TO-252)
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Vishay 8228
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AUD 1.1263
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100 A40 V7.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C107 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V280 nCEnhancement Trenchfet
WSR150N15


150V 150A 6.6m@10V,30A 210W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
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Winsok 52
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AUD 2.3522
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VBM2124N


120V 55A 38m@10V 1PCSPChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 52
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AUD 2.6799
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FDB2532-VB


150V 11m@10V 3V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 52
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AUD 2.9775
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IXFH140N10P-VB


100V 150A 6m@10V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 52
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AUD 3.4274
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Hot R6047ENZ4C13


N-Channel 600 V 47A (Tc) 481W (Tc) Through Hole TO-247
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ROHM 52
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AUD 3.9579
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47 A600 V72 mOhmsN - Channel 4 V- 55 C+ 150 C481 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V145 nCEnhancement  
FCP125N60E


MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
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ON Semiconductor 52
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AUD 4.3733
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29 A600 V125 mOhmsN - Channel 2.5 V- 55 C+ 150 C278 WThrough HoleTO - 220 - 3BulkSi1 Channel+/- 20 v , +/- 30 V75 nCEnhancement Superfet Ii
AOT266L


Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220
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Alpha & Omega 52
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AUD 4.806
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IPW65R041CFD


MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
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Infineon 52
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AUD 8.8489
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68.5 A650 V37 mOhmsN - Channel 3.5 V- 55 C+ 150 C500 WThrough HoleTO - 247TubeSi1 Channel20 V300 nCEnhancement Coolmos
IXTK88N30P-JSM


TO-264 MOSFETs ROHS
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JSMSEMI 49
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AUD 5.7184
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