MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH72N30X3-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 53
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AUD 4.0849
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IXFK120N20P-JSM


TO-264 MOSFETs ROHS
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JSMSEMI 53
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AUD 6.4873
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HC3M0045065D


TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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HXY MOS 53
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AUD 12.3773
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SI4539DY-T1-E3-VB


30V 8A 18m@10V 1PCSNChannel+1PCSPChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 52
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AUD 0.3659
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MOT13N50SF


500V 13A 48W 480m@10V,6.5A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
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MOT 52
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AUD 0.3953
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MCM1216-TP


MOSFET 16A,12V,P Channel Mosfet
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Micro Commercial Components (MCC) 52
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AUD 0.4548
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- 16 A- 12 V27 mOhmsP - Channel - 1 V- 55 C+ 150 C18 WSmd/SmtDFN2020 - 6JReelSi1 Channel+/- 8 V60 nCEnhancement  
ITA07N65R


650V 7A 1.2Ω@10V,3.5A 35W 4V@250uA 5.5pF@25V N Channel 1130pF@25V 24nC@10V +150℃@(Tj) TO-220F MOSFETs ROHS
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CRMICRO 52
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AUD 0.4769
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DMN30H4D0L-13


Diodes Incorporated MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W
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Diodes Incorporated 52
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AUD 0.5277
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550 mA300 V4 OhmsN - Channel 1.7 V- 55 C+ 150 C630 mWSmd/SmtU - DFN2020 - 6Reel-1 Channel+/- 20 V7.6 nCEnhancement  
BUK6Q26-40PJ


MOSFETs BUK6Q26-40P/SOT8002/MLPAK33
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Nexperia 52
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AUD 0.5296
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34 A40 V26.6 mOhmsP - Channel 2.7 V- 55 C+ 175 C56 WSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel20 V23 nCEnhancement  
DMT6017LSS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 52
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AUD 0.5713
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         Smd/SmtSO - 8Cut TapeSi      
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