MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ454EP-T1_GE3


MOSFET 200V Vds PowerPAK AEC-Q101 Qualified
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Vishay 53
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AUD 1.2738
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13 A200 V145 mOhmsN - Channel 2 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V56 nC Aec - Q101Trenchfet
CSD87501LT


Texas Instruments MOSFET 30V Dual N-Ch Common Drain NexFET
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Texas Instruments 53
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AUD 1.3111
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72 A30 V9.3 mOhmsN - channel 1.3 V- 55 C+ 150 C2.5 WSmd/smtPICOSTAR - 10ReelSi2_Channel20 V15 nC  Nexfet
CSD17327Q5A


Texas Instruments MOSFET 30V,NCh Nex FET Pwr MOSFET
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Texas Instruments 53
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AUD 1.3498
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13 A30 V15.5 mOhmsN - Channel 1.6 V- 55 C+ 150 C3 WSmd/SmtVSON - FET - 8ReelSi1 Channel10 V2.8 nC  Nexfet
2SK3326-VB


TO-220AB MOSFETs ROHS
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VBsemi Elec 53
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AUD 1.4431
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SIS443DN-T1-GE3


Vishay Semiconductors MOSFET -40V .0117Ohm10V 35A P-Ch G-III
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Vishay 53
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AUD 1.4836
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- 35 A- 40 V16 mOhmsP - Channel20 V- 1 v to - 2.3 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK - 1212 - 8Reel   41.5 nC   
SI7972DP-T1-GE3-VB


DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 53
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AUD 1.5056
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TPCA8016-H-VB


60V 6m@10V 3.6V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 53
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AUD 2.0901
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SP010N02GHTF


100V 300A 1.7m 1 N-Channel TO-247 MOSFETs ROHS
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Siliup 53
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AUD 2.1626
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TK12A60D(STA4,Q,M)


MOSFET N-Ch MOS 12A 600V 45W 1800pF 0.55
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Toshiba 53
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AUD 2.9231
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12 A600 V550 mOhmsN - Channel    45 WThrough HoleTO - 220FP - 3 Si1 Channel    Dtmosiv
IXTP80N10T


MOSFET 80 Amps 100V 13.0 Rds
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IXYS 53
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AUD 3.1522
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80 A100 V14 mOhmsN - Channel  - 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Hiperfet
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