MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS6H800NLWFT1G


MOSFET T8 80V LL NFET
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ON Semiconductor 56
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AUD 3.6614
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           Cut Tape       
TK20E60W,S1VX


MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Toshiba 56
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AUD 3.9403
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20 A600 V130 mOhmsn - channel30 V3.7 V- 55 C+ 150 C165 Wthrough holeTO - 220 - 3 si1 channel30 V48 nCenhancement dtmosiv
NVMFS5C410NWFAFT3G


40V 0.92m@50A,10V 3.5V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS
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ON Semiconductor 56
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AUD 8.6088
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TK39J60W5,S1VQ


Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC
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Toshiba 56
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AUD 10.6716
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38.8 A600 V55 mOhmsn - channel 2.7 v to 3.7 V- 55 C+ 150 C270 Wthrough holeTO - 3P - 3Reelsi1 channel30 V110 nCenhancement  
IXTR48P20P


MOSFET -30.0 Amps -200V 0.093 Rds
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IXYS 56
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AUD 12.6
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30 A200 V93 mOhmsP - Channel     Through HoleTO - 247 - 3TubeSi      
B2M065120H


Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
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BASiC Semiconductor 56
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AUD 16.0687
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            SiC      
IPN50R950CEATMA1


Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
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Infineon 55
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AUD 0.266
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DMN6040SK3-13


60V 35A 25mO@10V,35A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 55
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AUD 0.3998
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CXDM4060N TR


MOSFET SMD Small Sig Mosfet NCh Enh Mode Hi Crnt
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Central Semiconductor 55
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AUD 0.6321
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6 A40 V45 mOhmsN - Channel  - 55 C+ 150 C1.2 WSmd/SmtSOT - 89 - 3ReelSi1 Channel20 V12 nCEnhancement  
NCE65NF036T


TO-247 MOSFETs ROHS
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NCE Power 1
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AUD 6.0486
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