MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTD4858NAT4G-VB


TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 56
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AUD 0.6819
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AOD2610


60V 50A 12mO@10V,20A 3W N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 56
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AUD 0.7278
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2SK1623


100V 40A 30mO@10V,5A 3.75W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 56
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AUD 0.7399
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TSF20N50MR


TO-220F MOSFETs ROHS
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Truesemi 56
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AUD 0.915
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WMM13N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 13A; 130W
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Wayon 56
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AUD 1.1534
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            Sj - Mosfet M3      
IRFB7730PBF


International Rectifier MOSFET 75V Single N-Channel HEXFET Power
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Infineon 56
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AUD 1.7076
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195 A75 V2.6 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V271 nCEnhancement Strongirfet
DMN95H2D2HCTI


MOSFET MOSFETBVDSS: >800V
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Diodes Incorporated 56
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AUD 2.1731
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6 A950 V1.7 OhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleI TO - 220AB - 3 Si1 Channel30 V20.3 nCEnhancement  
MS4N1350B


1.5kV 4A 140W 5.8@10V,1.3A 6V@250A 1 N-Channel TO-3PB MOSFETs ROHS
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MASPOWER 56
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AUD 2.3305
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RS7P200BMTB1


MOSFETs DFN 100V 200A N-CH
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ROHM 56
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AUD 3.2179
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200 A100 V4 mOhmsN - Channel 4 V- 55 C+ 175 C217 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel20 V72 nCEnhancement  
SI7611DN-T1-GE3


MOSFET 40V 18A 39W 25mohm @ 10V
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Vishay 56
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AUD 3.2732
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18 A40 V25 mOhmsP - Channel 1 V- 50 C+ 150 C39 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel- 10 V41 nCEnhancement Trenchfet
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