MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STS10DN3LH5


Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
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STMicroelectronics 87
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AUD 1.7621
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10 A30 V21 mOhmsn - channel    2.5 Wsmd/smtSO - 8Reelsi2 channel    stripfet
WMN26N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
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Wayon 87
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AUD 2.7164
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            WMOS C4      
KNH7650A


MOSFET N Trench 500V 25A 4V @ 250uA 210 mΩ @ 14A,10V TO-3P RoHS
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KIA 87
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AUD 2.8344
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SPW35N60C3


MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3
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Infineon 87
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AUD 3.1463
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34.6 A600 V100 mOhmsN - Channel 2.1 V- 55 C+ 150 C313 WThrough HolePG - TO - 247 - 3TubeSi1 Channel10 V150 nCEnhancement Coolmos
IPD50P03P4L11ATMA1


MOSFET P-CHANNEL
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Infineon 87
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AUD 3.2321
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   P Channel      TO - 252 - 3Reel       
MS60N06HGB0


TO-3PB MOSFETs ROHS
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MASPOWER 87
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AUD 3.3029
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IXTA80N075L2


MOSFET MOSFET N CHANNEL
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IXYS 87
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AUD 16.0731
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80 A75 V24 mOhmsN - Channel 2.5 V- 55 C+ 150 C357 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V103 nCEnhancement  
IRF6614TRPBF


N-Channel 40 V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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Infineon 87
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AUD 16.955
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12.7 A40 V7.1 mOhmsN - Channel20 V   42 WSmd/SmtDirectfetReelSi1 Channel20 V19 nC  Directfet
SPP3095T252RG-VB


30V 26A 1PCSPChannel TO-252 MOSFETs ROHS
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VBsemi Elec 86
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AUD 0.3456
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SWN4N80D


800V 4A 3.2Ω TO-251N MOSFETs ROHS
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Sam&wing 86
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AUD 0.3722
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