MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
120N10


TO-263 MOSFETs ROHS
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GOODWORK 86
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AUD 1.1912
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PSMN4R5-80YSFX


MOSFETs SOT669 N CHAN 80V
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Nexperia 86
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AUD 1.2477
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100 A80 V4.5 mOhmsN - Channel 4 V- 55 C+ 175 C238 WSMD/SMTLFPAK56 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V60 nCEnhancement  
BSC037N08NS5-HXY


100V 85A 4.3m 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 86
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AUD 1.2978
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TSA50N20M


TO-3P MOSFETs ROHS
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Truesemi 86
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AUD 1.6295
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IRFS4127TRLPBF


MOSFET N Trench 200V 72A (Tc) 5V @ 250uA 22 mΩ @ 44A,10V D2Pak RoHS
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Infineon 86
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AUD 2.0647
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72 A200 V22 mOhmsN - Channel  - 55 C+ 175 C375 WSmd/SmtD2PAKReelSi1 Channel20 V100 nCEnhancement  
STW7NK90Z


Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO247-3
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STMicroelectronics 86
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AUD 2.194
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5.8 A900 V2 OhmsN - Channel 3 V- 55 C+ 150 C140 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V46.5 nCEnhancement SuperMESH
STP14N80K5


MOSFET N-channel 800 V 0.400 Ohm typ. 12 A MDmesh K5 Power MOSFET in a TO-220 package
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STMicroelectronics 86
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AUD 2.4955
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         Through HoleTO - 220 - 3TubeSi     Mdmesh
IPD320N20N3G-VB


200V 25A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 86
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AUD 2.6561
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TK16N60W,S1VF


N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-247
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Toshiba 86
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AUD 3.4925
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15.8 A600 V160 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C130 WThrough HoleTO - 247 - 3  1 Channel30 V38 nC  Dtmosiv
DMTH10H017LPDQ-13


MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K
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Diodes Incorporated 86
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AUD 3.9599
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