MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPH1R306PL1,LQ


MOSFETs UMOS9 SOP-ADV(N) RDSon=1.34mohm(max)
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Toshiba 116
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AUD 2.6592
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IRFH8303TRPBF


MOSFET MOSFET N-CH 30V 100A PQFN
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Infineon 115
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AUD 1.2248
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100 A30 V1.1 mOhmsN - Channel20 V2.2 V  156 WSmd/SmtPQFN - 8 5X6ReelSi1 Channel20 V58 nC   
IPB049NE7N3 G


MOSFET N-Channel 75V MOSFET
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Infineon 115
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AUD 2.0687
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80 A75 V4.4 mOhmsN - Channel 2.3 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V68 nCEnhancement Optimos
IPB034N06L3GATMA1


Infineon Technologies MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
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Infineon 115
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AUD 3.6917
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90 A60 V2.7 mOhmsN - Channel+/- 20 V1.7 V- 55 C+ 150 C167 WSmd/SmtPG - TO 263 - 3Reel-1 Channel20 V59 nCEnhancement Optimos
ALD910022SALI


Advanced Linear Devices MOSFET Dual SAB MOSFET ARRAY VT=2.20V
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Advanced Linear Devices 115
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AUD 6.091
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1 uA10.6 V2.2 mOhmsN - Channel 2.18 V- 40 C+ 85 C500 mWSmd/SmtSOIC - 8TubeSi2 Channel10.6 V Enhancement  
APT7F100B


MOSFET FG, FREDFET, 1000V, TO-247
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Microchip 115
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AUD 6.973
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7 A1000 V1.76 OhmsN - Channel 2.5 V- 55 C+ 150 C290 WThrough HoleTO - 247 - 3TubeSi1 Channel+/- 30 V58 nCEnhancement  
NTMFS4C024NT1G


MOSFET N Trench 30V 11.9A 2.2V @ 250uA 2.8 mΩ @ 30A,10V SO-8FL RoHS
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ON Semiconductor 114
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AUD 0.2594
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         Smd/SmtSO - FL - 8Cut TapeSi      
CSD18535KCS


MOSFET 60-V, N channel NexFET power MOSFET, single TO-220, 2 mOhm 3-TO-220 -55 to 175
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Texas Instruments 111
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AUD 3.7612
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279 A60 V2 mOhmsn - channel 1.4 V- 55 C+ 175 C300 Wthrough holeTO - 220 - 3Tubesi1 channel10 V63 nCenhancement nexfet
NTMFS0D5N04XMT1G


MOSFETs 40V T10M IN S08FL HEFET GEN 2 PACKAGE
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ON Semiconductor 109
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AUD 1.9373
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414 A40 V520 uOhmsN - Channel 3.5 V- 55 C+ 175 C163 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V97.5 nCEnhancement  
STP80NF55-08


MOSFET N-Ch 55 Volt 80 Amp
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STMicroelectronics 1
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AUD 1.6994
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80 A55 V8 mOhmsN - Channel20 V - 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V EnhancementAec - Q101Stripfet
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