MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
K3878


900V 9A 350W 970m@10V,4.5A 3.95V@250uA 1 N-Channel TO-3P MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Minos 120
Ships to you
between Thu. 20 Aug to Tue. 25 Aug
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AUD 0.9462

Multiples of: 1

                   
DMTH43M8LK3Q-13


MOSFET MOSFETBVDSS: 31V-40V
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Diodes Incorporated 120
Ships to you
between Thu. 20 Aug to Tue. 25 Aug
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AUD 0.9535

Multiples of: 1

100 A40 V2.9 mOhmsN - Channel 1 V- 55 C+ 175 C88 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V38.5 nCEnhancementAec - Q101 
IPA60R600P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 120
Ships to you
between Thu. 06 Aug to Wed. 12 Aug
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AUD 1.0469

Multiples of: 1

            coolmos p6      
SIA108DJ-T1-GE3


MOSFET Nch 80V Vds 20V Vgs PowerPAK SC-70
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Vishay 120
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between Thu. 20 Aug to Tue. 25 Aug
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AUD 1.4526

Multiples of: 1

12 A80 V38 mOhmsN - Channel 2 V- 55 C+ 150 C19 WSmd/SmtSC - 70 - 6Cut TapeSi1 Channel20 V13 nCEnhancement  
CSD17577Q3AT


MOSFET 30V NCH NexFET MOSFET
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Texas Instruments 120
Ships to you
between Thu. 06 Aug to Wed. 12 Aug
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AUD 1.6299

Multiples of: 1

35 A30 V5.3 mOhmsN - Channel 1.4 V- 40 C+ 85 C53 WSmd/SmtVSONP - 8Cut TapeSi1 Channel20 V27 nC  Nexfet
WML53N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 53A; 34W
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Wayon 120
Ships to you
between Thu. 06 Aug to Wed. 12 Aug
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AUD 6.3313

Multiples of: 1

            Sj - Mosfet C2      
BSC030N03LS G


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 119
Ships to you
between Wed. 12 Aug to Fri. 14 Aug
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AUD 0.5221

Multiples of: 1

100 A30 V2.5 mOhmsN - Channel 1 V- 55 C+ 150 C69 WSmd/SmtTDSONReelSi1 Channel20 V55 nCEnhancement Optimos
PSMN2R0-30YLE,115


N-Channel 30 V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 105
Ships to you
between Wed. 12 Aug to Fri. 14 Aug
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AUD 1.2166

Multiples of: 1

100 A30 V1.7 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C272 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V87 nCEnhancement  
TK8S06K3L


60V 18.2A 73mO@10V,18.2A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 105
Ships to you
between Thu. 20 Aug to Tue. 25 Aug
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AUD 0.5398

Multiples of: 1

                   
SP60P11TQ


TO-220-3L-C MOSFETs ROHS
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Siliup 104
Ships to you
between Thu. 20 Aug to Tue. 25 Aug
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AUD 0.346

Multiples of: 1

                   
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