MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP4332PBF


MOSFET N Trench 250V 57A (Tc) 5V @ 250uA 33 mΩ @ 35A,10V TO-247 RoHS
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Infineon 121
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AUD 2.9795
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57 A250 V33 mOhmsN - Channel  - 40 C+ 175 C360 WThrough HoleTO - 247ACTubeSi1 Channel30 V99 nCEnhancement  
IXFH56N30X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 121
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AUD 13.5194
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           Tube      Hiperfet
FDMC6679AZ


P-Channel 30 V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
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ON Semiconductor 121
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AUD 0.7326
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20 A30 V10 mOhmsp - channel 1.8 V- 55 C+ 150 C41 Wsmd/smtMLP 3.3 x 3.3Reelsi1 channel25 V37 nC  powertrench
AON7318


Transistor: N-MOSFET; unipolar; 30V; 50A; 15.5W; DFN3.3x3.3
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Alpha & Omega 120
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AUD 0.5217
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STP60NF06FP-JSM


TO-220-3L MOSFETs ROHS
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JSMSEMI 120
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AUD 0.5217
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AOD4132


30V 100A 2mO@10V,100A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 120
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AUD 0.5495
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SI4447ADY-T1-GE3-VB


40V 16.1A 10m@10V 6.3W 1PCSPChannel SOP8 MOSFETs ROHS
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VBsemi Elec 120
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AUD 0.7715
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AOD4189


40V 50A 12mO@10V,50A P Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 120
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AUD 0.9238
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SP015N09GHTD


TO-263-3L MOSFETs ROHS
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Siliup 110
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AUD 0.8884
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IRFP9240PBF


P-Channel 200 V 12A (Tc) 150W (Tc) Through Hole TO-247AC
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Vishay 25
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AUD 1.5152
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12 A200 V500 mOhmsP - Channel 2 V- 55 C+ 150 C150 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V44 nCEnhancement  
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First...20712072207320742075...

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