MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC8010


MOSFET 30V N-Channel PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 197
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AUD 1.0506
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166 A30 V1.8 mOhmsN - Channel   + 150 C54 WSmd/SmtPOWER - 33ReelSi1 Channel 32 nC , 67 nC  Powertrench Power Clip
AP4578GH-HF-VB


60V 1PCSNChannel+1PCSPChannel TO-252-5 MOSFETs ROHS
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VBsemi Elec 139
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AUD 0.65
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KNB2708A


80V 160A 4mΩ@10V,25A 313W 4V@250uA N Channel TO-263-2 MOSFETs ROHS
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KIA 139
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AUD 0.8114
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IPS80R750P7AKMA1


Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK SL
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Infineon 139
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AUD 1.0405
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            Coolmos P7      
TK7Q60W,S1VQ


MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A
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Toshiba 139
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AUD 1.7403
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7 A600 V500 mOhmsN - Channel30 V3.7 V- 55 C+ 150 C60 WThrough HoleIPAK - 3 Si1 Channel30 V15 nCEnhancement Dtmosiv
FCH041N65F_F155


MOSFET SuperFET2 650V, 44 mOhm, FRFET
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ON Semiconductor 139
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AUD 10.3597
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76 A650 V41 mOhmsN - Channel20 v , 30 V5 V- 55 C+ 150 C595 WThrough HoleTO - 247 - 3TubeSi1 Channel20 v , 30 V226 nCEnhancement Superfet Ii
WMK25N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 21A; 250W
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Wayon 137
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AUD 4.3045
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            Sj - Mosfet M3      
STF10N65K3


STMicroelectronics MOSFET N-Channel 400V to 650V
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STMicroelectronics 135
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AUD 1.609
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10 A650 V750 mOhmsN - Channel30 V - 55 C+ 150 C35 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V42 nC  Supermesh
STW4N150


Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247-3
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STMicroelectronics 7
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AUD 2.3677
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            Mdmesh      
NXV65HR82DZ2


MOSFET APM16 CAA SF3 FRFET 82MOHM 650V L-FORMING
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ON Semiconductor 0
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AUD 40.2567
Multiples of: 72

26 A650 V82 mOhmsN - Channel 5 V- 40 C+ 125 C126 WThrough HoleAPMCA - 16TubeSi4 Channel- 20 V , + 20 V79.7 nCEnhancement  
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