MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSQ015P10TR


ROHM Semiconductor MOSFET 4V Drive Pch MOSFET
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ROHM 146
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AUD 0.5327
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- 1.5 A- 100 V470 mOhmsP - Channel     Smd/SmtT SMT - 6ReelSi1 Channel     
TSF10N60M


MOSFET N Trench 600V 10A (Tc) 5V @ 250uA 800 mΩ @ 5A,10V TO-220F RoHS
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Truesemi 146
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AUD 0.5511
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MLS60R150W


650V 26A 220W 126m@10V,9A 4V@250uA 1 N-Channel TO-247 MOSFETs ROHS
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Minos 146
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AUD 1.3024
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Hot IRFB7734PBF


International Rectifier MOSFET 75V Single N-Channel HEXFET Power
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Infineon 146
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AUD 1.4231
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183 A75 V3.5 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C290 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V180 nCEnhancement Strongirfet
SIS443DN-T1-GE3


Vishay Semiconductors MOSFET -40V .0117Ohm10V 35A P-Ch G-III
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Vishay 146
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AUD 1.4836
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- 35 A- 40 V16 mOhmsP - Channel20 V- 1 v to - 2.3 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK - 1212 - 8Reel   41.5 nC   
IRLIZ44GPBF


N-Channel 60 V 30A (Tc) 48W (Tc) Through Hole TO-220-3
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Vishay 146
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AUD 2.5284
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3 FPTubeSi      
IRFP7530PBF


Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
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Infineon 146
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AUD 2.749
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195 A60 V1.65 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C341 WThrough HoleTO - 247 - 3Tube   274 nC   
IPP048N12N3GXKSA1


Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
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Infineon 146
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AUD 3.3082
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            Optimos 3      
DMG2302U-HXY


20V 2.3A 48m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 145
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AUD 0.0155
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2SK3018


30V 100mA 200mW 8Ω@4V,10mA N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 97
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AUD 0.0107
Multiples of: 50

                   
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