MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VBM1101N


MOSFET N Trench 100V 100A 3.5V @ 250uA 10 mΩ @ 20A,4.5V TO-220AB RoHS
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VBsemi Elec 195
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AUD 1.0657
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NTH4L015N065SC1


MOSFET SIC MOS TO247-4L 650V
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ON Semiconductor 195
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AUD 28.6
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142 A650 V18 mOhmsN - Channel 4.3 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 4 Si1 Channel- 8 V , + 22 V283 nCEnhancement  
SWY10N65D


650V 10A TO-220FT MOSFETs ROHS
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Sam&wing 194
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AUD 0.4789
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FDMD8900


Fairchild Semiconductor MOSFET PT8 3012V Dual Nch Power Trench MOSFET
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ON Semiconductor 194
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AUD 1.4251
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66 A30 V3.4 mOhmsN - Channel - 4 mV /C- 55 C+ 150 C2.1 WSmd/SmtPOWER - 12ReelSi2 Channel12 V25 nC  Powertrench Power Clip
GC11N65K


MOSFET N Trench 650V 11A (Tc) 4V @ 250uA 360 mΩ @ 5.5A,10V TO-252 RoHS
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GOFORD 194
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AUD 1.5559
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DMC3025LSDQ-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 194
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AUD 1.9565
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8.5 A , 5.5 A30 V20 mOhms , 45 mOhmsN - Channel, P - Channel 1 v , 2 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V9.8 nC , 10.5 nCEnhancementAec - Q101 
OSH65R065


650V 53A 385W 65m TO-3PNB MOSFETs ROHS
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OSEN 194
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AUD 2.5993
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IMLT40R025M2HXTMA1


MOSFETs SIC-MOS
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Infineon 194
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AUD 7.6015
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68 A400 V32.1 mOhmsN - Channel 4.5 V- 55 C+ 175 C214 WSMD/SMTHDSOP - 16Reel , Cut TapeSiC1 Channel- 7 V , 23 V36 nCEnhancement CoolSiC
TK8A45D(STA4,Q,M)


MOSFET N-Ch MOS 8A 450V 35W 700pF 0.9 Ohm
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Toshiba 193
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AUD 1.0146
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IXFT50N60P3


MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET
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IXYS 68
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AUD 12.3299
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50 A600 V145 mOhmsn - channel 5 V  1040 Wsmd/smtTO - 268 - 3Tubesi1 channel30 V94 nC  hiperfet
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First...19361937193819391940...

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