MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ500AEP-T1_GE3


MOSFET N and P Channel 40V AEC-Q101 Qualified
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Vishay 196
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AUD 1.8511
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30 A40 V7.7 mOhms , 22 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 175 C48 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi2 Channel- 20 V , 20 V38.3 nC , 45 nCEnhancementAEC - Q101TrenchFET
VBZE40P03


30V 40A 18mO@10V,40A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 195
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AUD 0.4272
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NTD3055-094G-VB


60V 18A 73m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 195
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AUD 0.5279
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WML14N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
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Wayon 195
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AUD 1.5463
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            WMOS C4      
WMK072N12LG2


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 195
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AUD 2.1313
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IXFK64N50Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A
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IXYS 195
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AUD 36.3821
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64 A500 V85 mOhmsn - channel    1 kWthrough holeTO - 264 - 3Tubesi1 channel30 V145 nC  hiperfet
DMP2160UFDBQ-7


Diodes Incorporated MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS
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Diodes Incorporated 194
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AUD 0.353
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3.8 A20 V68 mOhmsP - Channel 900 mV- 55 C+ 150 C1.4 WSMD/SMTDFN - 2020 - 6Reel , Cut TapeSi2 Channel- 12 V , 12 V6.5 nCEnhancementAEC - Q101 
RS65R190T


TO-220 MOSFETs ROHS
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REASUNOS 193
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AUD 1.3961
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WMJ25N50D1B


Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
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Wayon 180
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AUD 1.2955
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WMK3N150D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
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Wayon 1
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AUD 1.5254
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            WMOS D1      
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First...19361937193819391940...

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