MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP4NK60Z


Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3
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STMicroelectronics 9700
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AUD 0.9172
Multiples of: 1000

            Supermesh      
OSW150N06T


60V 150A 2.6m 225W TO-263 MOSFETs ROHS
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OSEN 203
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AUD 0.5211
Multiples of: 1

                   
IPW60R165CP


N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO247-3-21
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Infineon 200
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AUD 3.7433
Multiples of: 1

21 A600 V165 mOhmsN - Channel  - 55 C+ 150 C192 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Coolmos
IXFX80N60P3


MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET
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IXYS 200
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AUD 23.4448
Multiples of: 1

80 A600 V70 mOhmsN - Channel 5 V- 55 C+ 150 C1.3 kWThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V190 nCEnhancement HiPerFET
APT30M61SFLLG


MOSFET FG, FREDFET, 300V, 0.61_OHM, D-3, TO-268, RoHS
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Microchip 200
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AUD 24.0112
Multiples of: 1

         Smd/SmtD3PAK - 3TubeSi      
RU30L30M


MOSFET QFN8(3X3) RoHS
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VBsemi Elec 199
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AUD 0.8428
Multiples of: 1

                   
IXFX80N50P


MOSFET 500V 80A
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IXYS 188
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AUD 28.7642
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80 A500 V65 mOhmsN - Channel 3 V- 55 C+ 150 C1.04 mWThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V197 nCEnhancement HiPerFET
CSD19532Q5BT


MOSFET 100V, 4.0 mOhm, SON5x6 N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
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Texas Instruments 166
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AUD 4.4695
Multiples of: 1

124 A100 V4.9 mOhmsN - Channel 2.6 V- 55 C+ 150 C3.1 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel20 V48 nCEnhancement Nexfet
BSP149 H6906


Infineon Technologies MOSFET N-Ch 200V 140mA SOT-223-3
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Infineon 89
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AUD 0.8964
Multiples of: 1

660 mA200 V1 Ohmsn - channel 2.1 V- 55 C+ 150 C1.8 Wsmd/smtSOT - 223 - 4Reelsi1 channel20 V14 nCdepletion  
CSD19535KTT


MOSFET 100-V, N channel NexFET power MOSFET, single D2PAK, 3.4 mOhm 3-DDPAK/TO-263 -55 to 175
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Texas Instruments 55
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AUD 3.8657
Multiples of: 1

197 A100 V3.4 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel10 V75 nCEnhancement Nexfet
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