MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB4310PBF


N-Channel 100 V 130A (Tc) 300W (Tc) Through Hole TO-220AB
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Infineon 203
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AUD 2.0971
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140 A100 V5.6 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V170 nC   
CI19N120SM


1.2kV 19A 160mΩ TO-247-3 MOSFETs ROHS
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Tokmas 203
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AUD 2.7727
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FDB0170N607L


MOSFET 60V TO263 7L JEDEC GREEN EMC
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ON Semiconductor 203
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AUD 3.8713
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300 A60 V3.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V173 nCEnhancement  
IXTR170P10P


MOSFET -108.0 Amps -100V 0.013 Rds
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IXYS 203
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AUD 29.306
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108 A100 V13 mOhmsp - channel 4 V- 55 C+ 150 C312 Wthrough holeTO - 247 - 3Tubesi 20 V240 nCenhancement polarp
SI4920DY-T1-E3-VB


30V 8.5A 16mΩ@10V 3.1W N Channel SOP8 MOSFETs ROHS
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VBsemi Elec 202
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AUD 0.3456
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RCX160N20


MOSFET 10V Drive Nch MOSFET
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ROHM 202
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AUD 1.036
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16 A200 V135 mOhmsN - Channel 3.25 V- 55 C+ 150 C43 WThrough HoleTO - 220FP - 3BulkSi1 Channel30 V26 nCEnhancement  
CSD87502Q2T


MOSFET 30-V, N channel NexFET power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection 6-WSON -55 to 150
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Texas Instruments 197
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AUD 1.3791
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5.0 A30 V35 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.3 WSmd/SmtWSON - FET - 6Cut TapeSi2 Channel20 V6 nC , 6 nCEnhancement Nexfet
DMTH6010LPDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 196
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AUD 1.7282
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         Smd/SmtPowerdi5060 - C - 8Cut TapeSi    Aec - Q101 
IRFP9140PBF


MOSFET RECOMMENDED ALT 844-IRFP9140PBF
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Vishay 194
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AUD 2.4657
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21 A100 V200 mOhmsP - Channel 2 V- 55 C+ 175 C180 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V61 nCEnhancement  
SP015N03BGHTD


150V 220A 3.7m 1 N-Channel TO-263-3L MOSFETs ROHS
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Siliup 163
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AUD 2.1304
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