MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP1R6N50D2


MOSFET N-CH MOSFETS (D2) 500V 1.6A
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IXYS 231
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 3.3821

Multiples of: 1

1.6 A500 V2.3 OhmsN - Channel  - 55 C+ 150 C100 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V23.7 nCDepletion  
FCH150N65F_F155


Fairchild Semiconductor MOSFET
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ON Semiconductor 231
Ships to you
between Mon. 10 Aug to Wed. 12 Aug
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AUD 6.206

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24 A650 V150 mOhmsn - channel 5 V- 55 C+ 150 C298 Wthrough holeTO - 247 - 3Tubesi1 channel20 v , 30 V72 nC  superfet ii frfet
IRLR8103VTRPBF-VB


30V 100A 2mΩ@10V null TO-252 MOSFETs ROHS
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VBsemi Elec 230
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between Tue. 18 Aug to Fri. 21 Aug
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AUD 0.6121

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IPF013N04NF2SATMA1


MOSFETs N
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Infineon 230
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 1.7075

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232 A40 V1.35 mOhmsN - Channel 2.1 V- 55 C+ 175 C188 WSMD/SMTTO - 263 - 7Reel , Cut TapeSi1 Channel- 20 V , + 20 V106 nCEnhancement StrongIRFET
IXFP20N85X


MOSFET 850V Ultra Junction X-Class Pwr MOSFET
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IXYS 230
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 8.6358

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20 A850 V330 mOhmsN - Channel 3.5 V- 55 C+ 150 C540 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V63 nCEnhancement Hiperfet
IPW65R048CFDAFKSA1


MOSFET N-Ch 650V 63.3A TO247-3
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Infineon 230
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 9.1119

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63.3 A650 V43 mOhmsN - Channel 3.5 V- 40 C+ 150 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V270 nCEnhancement Coolmos
IXTK102N65X2


MOSFET MSFT N-CH ULTRA JNCT X2 3&44
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IXYS 230
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between Mon. 10 Aug to Wed. 12 Aug
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AUD 23.3955

Multiples of: 1

102 A650 V30 mOhmsn - channel 3 V- 55 C+ 150 C1.04 kWthrough holeTO - 264 - 3Tubesi 30 V152 nCenhancement hiperfet
FDC638APZ


Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
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ON Semiconductor 230
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between Tue. 18 Aug to Fri. 21 Aug
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AUD 0.2033

Multiples of: 1

   P Channel               
IRFP3077PBF


Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
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Infineon 194
Ships to you
between Tue. 04 Aug to Mon. 10 Aug
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AUD 4.6175

Multiples of: 1

200 A75 V2.8 mOhmsN - Channel    340 WThrough HoleTO - 247ACTubeSi1 Channel20 V160 nC   
IXFP22N65X2M


MOSFET 650V/22A OVERMOLDED TO-220
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IXYS 194
Ships to you
between Tue. 18 Aug to Fri. 21 Aug
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AUD 4.0714

Multiples of: 1

22 A650 V145 mOhmsN - Channel 3.5 V- 55 C+ 150 C37 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V37 nCEnhancement Hiperfet
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