MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML5203


MOSFET P Trench 30V 3A 3V @ 250uA 85 mΩ @ 4.1A,10V SOT-23 RoHS
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Youtai 339
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AUD 0.0377
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IRFBG30PBF


1kV 4A 4.5Ω TO-220-3 MOSFETs ROHS
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Tokmas 321
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AUD 0.7759
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SVSP24N60FJDD2


TO-220FJD-3L MOSFETs ROHS
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Silan 321
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AUD 1.0246
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WMM120P06TS


Transistor: P-MOSFET; unipolar; TO263
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Wayon 321
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AUD 1.7552
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SIZ980DT-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
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Vishay 321
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AUD 2.0419
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20 A , 60 A30 V4.7 mOhms , 1.1 mOhmsN - Channel 1.2 v , 1.1 V- 55 C+ 150 C20 w , 66 WSmd/SmtPowerpair - 6X5 - 8Cut TapeSi2 Channel- 16 v , 20 V18 nC , 77 nCEnhancement Trenchfet
NTPF082N65S3F


MOSFET SUPERFET3 650V TO220F PKG
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ON Semiconductor 321
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AUD 7.4045
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40 A650 V82 mOhmsN - Channel 3 V- 55 C+ 150 C48 WThrough HoleTO - 220F - 3TubeSi1 Channel30 V70 nCEnhancement  
STB45N50DM2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 321
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AUD 6.4366
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35 A500 V84 mOhmsN - Channel 4 V- 55 C+ 150 C250 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 25 V57 nCEnhancementAec - Q101Mdmesh
2N7002KLW


SOT-323 MOSFETs ROHS
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Changjing Electronics Technology 320
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AUD 0.0349
Multiples of: 10

                   
G3401L


30V 4.2A 1.2W 50mΩ@10V,4.2A 1V@250uA 75pF@15V P Channel 950pF@15V 9.5nC@4.5V -55℃~+150℃@(Tj) SOT-23-3L MOSFETs ROHS
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GOFORD 320
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AUD 0.0435
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APM2301AAC


MOSFET P Channel 20V 3A 1V @ 250uA 120mO @ 3A,4.5V SC-59 RoHS
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Shikues 320
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AUD 0.0613
Multiples of: 10

                   
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