MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMM25N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 21A; 250W
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Wayon 339
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AUD 3.9701
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            Sj - Mosfet M3      
IXTK8N150L


MOSFET 8 Amps 1500V
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IXYS 339
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AUD 61.3209
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8 A1.5 kV3.6 OhmsN - Channel 8 V- 55 C+ 150 C700 WThrough HoleTO - 264 - 3TubeSi 30 V250 nCEnhancement  
WMO30P03TS


Transistor: P-MOSFET; unipolar; TO252
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Wayon 338
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AUD 0.3009
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WSF09N20


MOSFET N Trench 200V 9A (Tc) 2.5V @ 250uA 250 mΩ @ 4.5A,10V TO-252-2 (DPAK) RoHS
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Winsok 338
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AUD 0.5223
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HYG016N04LS1B


40V 240A 1.4mO@10V,40A 200W 1.9V@250uA 53pF@25V N Channel 5.894nF@25V 43.6nC@4.5V -55?~+175?@(Tj) TO-263-2L MOSFETs ROHS
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HuaYi 338
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AUD 0.8328
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Hot R8005ANX


ROHM Semiconductor MOSFET
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ROHM 338
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AUD 1.9045
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5 A800 V2.08 OhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220 - 3Bulk-1 Channel+/- 30 V21 nCEnhancement  
IPP65R190C6XKSA1


Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
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Infineon 338
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AUD 2.7052
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            coolmos      
NTHL125N65S3H


MOSFET SUPERFET3 FAST 125MOHM TO-247-3
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ON Semiconductor 338
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AUD 6.8134
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24 A650 V125 mOhmsN - Channel 4 V- 55 C+ 150 C171 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V44 nCEnhancement  
HXY4402S


20V 20A 5.5mΩ@4.5V,20A N Channel SOP-8 MOSFETs ROHS
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HXY MOS 337
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AUD 0.0997
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NCE60H15A


60V 150A 3.1mΩ@10V,75A 220W 3V@250uA 488pF@30V N Channel 5.451nF@30V 130.8nC@10V -55℃~+175℃@(Tj) TO-220-3L MOSFETs ROHS
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NCE Power 335
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AUD 0.9075
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