MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL3705ZSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
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Infineon 23328
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AUD 1.7785
Multiples of: 1

86 A55 V8 mOhmsN - Channel 3 V + 175 C130 WSmd/SmtD2PAKReelSi1 Channel 60 nC   
FQP50N06


TO-220 MOSFETs ROHS
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JSMSEMI 339
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AUD 0.4594
Multiples of: 5

                   
OSPF12N70


700V 12A 0.81 52W TO-220F MOSFETs ROHS
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OSEN 339
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AUD 0.5835
Multiples of: 1

                   
FDD3682


Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; TO252AA
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ON Semiconductor 339
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AUD 0.9627
Multiples of: 1

   N Channel               
STP22NM60N


STMicroelectronics MOSFET N-channel 600 V 0.190ohm 16A Mdmesh
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STMicroelectronics 339
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AUD 1.8285
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16 A600 V200 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Mdmesh
FDMS039N08B


Power-56 MOSFETs ROHS
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ON Semiconductor 339
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AUD 1.9375
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19.4 A80 V3.2 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
FDP19N40


N-Channel 400 V 19A (Tc) 215W (Tc) Through Hole TO-220-3
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ON Semiconductor 339
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AUD 2.472
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19 A400 V240 mOhmsn - channel  - 55 C+ 150 C215 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement unifet
R6011ENJTL


MOSFET 10V Drive Nch MOSFET
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ROHM 339
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AUD 2.9799
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11 A600 V340 mOhmsN - Channel 2 V- 55 C+ 150 C124 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 30 V32 nCEnhancement  
TK7R2E15Q5,S1X


MOSFETs 150V UMOS10-HSD TO-220 7.2mohm
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Toshiba 339
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AUD 3.3328
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84 A150 V7.2 mOhmsN - Channel 4.5 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V66 nCEnhancement  
IPA60R160C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
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Infineon 241
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AUD 1.6372
Multiples of: 249

            coolmos c6      
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