MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSP324H6327XTSA1


Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
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Infineon 3252
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AUD 0.4646
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            Sipmos      
AGM056N10A


100V 100A 4.7m@10V,20A 123W 2.5V@250uA 1PCSNChannel DFN(5x6) MOSFETs ROHS
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AGM-Semi 344
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AUD 0.6776
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SWI8N65DB


650V 8A 1Ω TO-251 MOSFETs ROHS
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Sam&wing 343
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AUD 0.3832
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SE150180G


MOSFET N Trench 150V 180A 5V @ 250uA 5 mΩ @ 100A,10V TO-263-2 RoHS
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SINO-IC 343
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AUD 3.8187
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UJ4C075033K4S


MOSFET 750V/33mOhm, N-Off SiC CASCODE, G4, TO-247-4L, REDUCED RTH
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UnitedSiC 343
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AUD 14.9239
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47 A750 V33 mOhmsN - Channel 6 V- 55 C+ 175 C242 WSMD/SMTTO - 247 - 4TubeSiC1 Channel- 20 V , + 20 V37.8 nCDepletion  
FDMS7680


MOSFET 30/20V Nch PowerTrench
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ON Semiconductor 342
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AUD 0.4253
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14 A30 V6.9 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER - 56ReelSi1 Channel20 V Enhancement Powertrench
IPP048N04N G


MOSFET N-Channel 40V MOSFET
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Infineon 342
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AUD 0.9571
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70 A40 V4 mOhmsN - Channel 2 V- 55 C+ 175 C79 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V41 nCEnhancement Optimos
FDD4141


40V 50A 12mO@10V,50A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 333
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AUD 0.731
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CSD18536KCS


MOSFET 60-V, N channel NexFET power MOSFET, single TO-220, 1.6 mOhm 3-TO-220 -55 to 175
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Texas Instruments 333
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AUD 5.391
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349 A60 V1.6 mOhmsN - Channel 1.4 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V108 nCEnhancement Nexfet
ISA250250N04LMDSXTMA1


MOSFETs OptiMOS Dual power MOSFET 40V
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Infineon 303
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AUD 0.4252
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7.9 A40 V25 mOhmsN - Channel 2.7 V- 55 C+ 150 C2.5 WSMD/SMTDSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V7.9 nCEnhancement OptiMOS
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