MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD19535KCS


N-Channel 100 V 150A (Ta) 300W (Tc) Through Hole TO-220-3
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Texas Instruments 377
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AUD 4.5552
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187 A100 V3.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V78 nCEnhancement Nexfet
IXTH1N200P3HV


MOSFET 2000V/1A HV Power MOSFET, TO-247HV
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IXYS 377
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AUD 9.5881
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1 A2 kV40 Ohmsn - channel 2 V- 55 C+ 150 C125 Wthrough holeTO - 247 - 3Tubesi 20 V23.5 nCenhancement  
IRL510PBF-BE3


N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 376
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AUD 0.6274
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5.6 A100 V540 mOhmsN - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V6.1 nCEnhancement  
AUIRFS8407


Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
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Infineon 376
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AUD 2.5547
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195 A40 V1.8 mOhmsN - Channel20 V2 V To 4 V- 55 C+ 175 C230 WSmd/SmtD2PAK - 2TubeSi1 Channel20 V150 nCEnhancementAec - Q101Coolirfet
IXFK80N50P


MOSFET 500V 80A
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IXYS 376
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AUD 27.894
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80 A500 V65 mOhmsN - Channel  - 55 C+ 150 C1040 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V Enhancement Hiperfet
APM3055LUC-TRL-VB


30V 50A 7mΩ@10V null TO-252 MOSFETs ROHS
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VBsemi Elec 376
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AUD 0.3566
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FDMC4435BZ-MS


30V 50A 15mΩ@10V 3V P Channel DFN5x6-8L MOSFETs ROHS
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MSKSEMI 375
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AUD 0.3532
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NVMFD5853NLT1G-MS


40V 50A 11mΩ@10V 2.5V N Channel DFN5x6-8L MOSFETs ROHS
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MSKSEMI 375
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AUD 0.5092
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IRFZ44NS-HXY


55V 49A 10mΩ@10V 4V null TO-263 MOSFETs ROHS
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HXY MOS 367
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AUD 0.3957
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AP2321GN


SOT-23 MOSFETs ROHS
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APEC 366
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AUD 0.2247
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