MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP3415PBF


Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
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Infineon 1611
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AUD 2.9618
Multiples of: 1

43 A150 V42 mOhmsN - Channel    200 WThrough HoleTO - 247ACTubeSi1 Channel20 V133.3 nC   
FDPF18N50T


MOSFET 500V N-Channel PowerTrenchAr MOSFET
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ON Semiconductor 873
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AUD 3.2649
Multiples of: 50

18 A500 V265 mOhmsN - Channel  - 55 C+ 150 C38.5 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement  
STW32NM50N


MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET
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STMicroelectronics 582
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AUD 6.1763
Multiples of: 600

13.86 A500 V130 mOhmsn - channel 4 V  190 Wthrough holeTO - 247Tubesi1 channel25 V62.5 nC  mdmesh
STW88N65M5-4


MOSFET N-channel 650 V, 0.024 Ohm, 84 A, MDmesh(TM) V Pow, POWER MOSFET
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STMicroelectronics 378
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AUD 39.459
Multiples of: 600

   N - Channel     Through HoleTO - 247 - 4 Si1 Channel    Mdmesh
WMQ30DN04TS


Transistor: N-MOSFET x2; unipolar; PDFN3030-8
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Wayon 377
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AUD 0.4075
Multiples of: 1

                   
IPP16CN10NGXKSA1


MOSFET N-Ch 100V 53A TO220-3
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Infineon 377
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AUD 1.2106
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53 A100 V16 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Optimos
IPP040N08NF2SAKMA1


MOSFET TRENCH 40<-<100V
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Infineon 377
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AUD 1.4037
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115 A80 V4 mOhmsN - Channel 3.8 V- 55 C+ 175 C150 WThrough Hole TubeSi1 Channel- 20 V , + 20 V54 nCEnhancement  
SPP20N65C3XKSA1


N-Channel 650 V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3
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Infineon 377
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AUD 3.2672
Multiples of: 1

20.7 A650 V160 mOhmsN - Channel  - 55 C+ 150 C208 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V87 nC  Coolmos
IPA65R650CE


650V 7A 28W 650mO@10V,2.1A N Channel TO-220 MOSFETs ROHS
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Infineon 371
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AUD 0.6786
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STU6N90K5


MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in an IPAK package
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STMicroelectronics 367
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AUD 1.3118
Multiples of: 1

6 A900 V910 mOhmsn - channel 3 V- 55 C+ 150 C110 Wthrough holeTO - 251 - 3 si1 channel30 V11 nCenhancement mdmesh
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