MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPI075N15N3GXKSA1


Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
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Infineon 669
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AUD 3.6284
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            Optimos 3      
STP9NK50ZFP


MOSFET N-Ch, 500V-0.72ohms 7.2A
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STMicroelectronics 382
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AUD 1.2746
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7.2 A500 V850 mOhmsN - Channel 3 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3TubeSi1 Channel10 V32 nCEnhancement Supermesh
Hot VN0550N3-G


Transistor: N-MOSFET; unipolar; 500V; 0.15A; 1W; TO92
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Microchip 382
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AUD 1.6119
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50 mA500 V60 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
DMN601K-7


60V 300mA 2O@10V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 381
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AUD 0.0418
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   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
WML26N60C4


TO-220F-3 MOSFETs ROHS
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Wayon 381
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AUD 2.403
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IPA037N08N3 G


MOSFET N-Ch 80V 75A TO220FP-3 OptiMOS 3
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Infineon 381
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AUD 3.9246
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75 A80 V3.7 mOhmsN - Channel  - 55 C+ 175 C41 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V29 nCEnhancement Optimos
WMT07N10TS


Transistor: N-MOSFET; unipolar; SOT223
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Wayon 380
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AUD 0.3009
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IPB022N12NM6ATMA1


MOSFETs N
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Infineon 380
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AUD 6.1075
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167 A120 V2.5 mOhmsN - Channel 3.1 V- 55 C+ 175 C395 WSMD/SMTD2PAK - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V113 nCEnhancement  
TPM6014PD8L-1


DFN(3x3) MOSFETs ROHS
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TECH PUBLIC 379
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AUD 0.6129
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STP20NM60FD


Transistor: N-MOSFET; unipolar; 600V; 12.6A; 45W; TO220-3
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STMicroelectronics 371
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AUD 3.8448
Multiples of: 1

                   
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