MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
P15F60HP2F-5600


MOSFET Hi-PotMOS Power MOSFET Through Hole
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Shindengen 387
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AUD 2.2149
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            Hi - Potmos2      
WMK13N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 13A; 130W
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Wayon 387
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AUD 2.403
Multiples of: 1

            Sj - Mosfet M3      
SIJ188DP-T1-GE3


MOSFET 60V Vds; 20V Vgs PowerPAK SO-8L
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Vishay 387
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AUD 2.4602
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92.4 A60 V3.85 mOhmsN - Channel 2 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel20 V44 nCEnhancement Trenchfet, Powerpak
R6520ENZ4C13


MOSFET 650V 20A TO-247, Low-noise Power MOSFET
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ROHM 387
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AUD 4.2687
Multiples of: 1

20 A650 V205 mOhmsN - Channel 4 V- 55 C+ 150 C231 WThrough HoleTO - 247G - 3TubeSi1 Channel- 20 V , + 20 V61 nCEnhancement  
R6035ENZ4C13


MOSFET 600V 35A TO-247, Low-noise Power MOSFET
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ROHM 387
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AUD 7.1418
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35 A600 V102 mOhmsN - Channel 4 V- 55 C+ 150 C379 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , + 20 V110 nCEnhancement  
ZXMN7A11GTA


MOSFET 70V N-Channel 3.8A MOSFET
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Diodes Incorporated 386
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AUD 0.7919
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3.8 A70 V130 mOhmsN - Channel  - 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V Enhancement  
SVF10N80F


800V 10A 920mO@10V,5A 62W N Channel TO-220 MOSFETs ROHS
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Silan 386
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AUD 0.9253
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SIDR390DP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
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Vishay 386
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AUD 2.4952
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100 A30 V1.15 mOhmsN - Channel 800 mV- 55 C+ 150 C125 WSmd/SmtPOWERPAK - SO - 8DC - 8Cut TapeSi1 Channel4.5 V102 nCEnhancement Trenchfet
IPI60R125CPXKSA1


Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
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Infineon 386
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AUD 4.7341
Multiples of: 1

            coolmos cp      
DMTH4014LPD-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 0
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AUD 0.7132
Multiples of: 2500

         Smd/SmtPowerdi5060 - 8Cut TapeSi      
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