MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTA64N10L2


MOSFET MSFT N-CH LINEAR L2
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IXYS 2361
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AUD 16.5493
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64 A100 V32 mOhmsn - channel 2.5 V- 55 C+ 150 C357 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V100 nCenhancement  
FQD50N06-HXY


60V 50A 15mΩ@10V 2.5V null TO-252-2L MOSFETs ROHS
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HXY MOS 424
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AUD 0.3389
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IPI076N15N5AKSA1


MOSFET TRENCH >=100V
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Infineon 421
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AUD 3.5955
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112 A150 V5.9 mOhmsn - channel 3 V- 55 C+ 175 C214 Wthrough holeTO - 262 - 3Tubesi1 channel+/- 20 V61 nCenhancement optimos
IPB60R099CP


MOSFET COOL MOS PWR TRANS MAX 650V
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Infineon 421
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AUD 8.0317
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31 A600 V90 mOhmsN - Channel 2.5 V- 55 C+ 150 C255 WSmd/SmtTO - 263ReelSi1 Channel20 V80 nCEnhancement Coolmos
UJ3C065080B3


MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
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UnitedSiC 421
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AUD 9.4567
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25 A650 V100 mOhmsN - Channel 4 V- 55 C+ 175 C115 WSmd/SmtD2PAK - 3 Sic1 Channel25 V51 nCEnhancement  
NSF030120L4A0Q


MOSFETs NSF030120L4A0/SOT8071/TO247-4L
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Nexperia 421
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AUD 12.6746
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           TubeSi      
WM03P56M2


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 420
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AUD 0.0982
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IPD80P03P4L-07-TP


30V 80A 11m@4.5V,20A 83W 1V@250uA TO-252 MOSFETs ROHS
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TECH PUBLIC 420
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AUD 0.3992
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WMO120N04TS


Transistor: N-MOSFET; unipolar; TO252
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Wayon 420
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AUD 0.6018
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IPD048N06L3 G


Infineon Technologies MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
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Infineon 223
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AUD 1.5495
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90 A60 V4.8 mOhmsN - Channel20 V - 55 C+ 175 C115 WThrough HoleDPAK - 3ReelSi1 Channel20 V50 nCEnhancement Optimos
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