MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSD4080DN56


PDFN-8(5.9x5.2) MOSFETs ROHS
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Winsok 425
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AUD 0.4046
Multiples of: 1

                   
RS30N150D


TO-252 MOSFETs ROHS
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REASUNOS 421
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AUD 0.2126
Multiples of: 5

                   
BRD100N03


MOSFET N Trench 30V 100A (Tc) 3V @ 250uA 5.5 mΩ @ 50A,10V TO-252 RoHS
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Blue Rocket 421
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AUD 0.2525
Multiples of: 5

                   
AP3N50F


500V 3A 2.6Ω@30V,3A null TO-220F MOSFETs ROHS
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Quan Li 421
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AUD 0.4755
Multiples of: 5

                   
TM70P03NF


30V 70A 9m PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 421
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AUD 0.543
Multiples of: 5

                   
10N65L-TF1-T


TO-220F1 MOSFETs ROHS
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Unisonic 421
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AUD 0.5749
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TPH3R704PL,L1Q


MOSFET 40 Volt N-Channel
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Toshiba 421
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AUD 0.7129
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92 A40 V6 mOhmsN - Channel 1.4 V- 55 C+ 175 C81 WSmd/SmtSOP - 8ReelSi1 Channel+/- 20 V27 nCEnhancement  
YJG80G06A


Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 50A; 38W
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Yangjie 421
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AUD 0.8003
Multiples of: 1

            Split Gate Trench      
IRLZ44NSPBF-VB


60V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 415
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AUD 0.7439
Multiples of: 1

                   
JMTP130P04A


SOIC-8 MOSFETs ROHS
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JieJie 407
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AUD 0.3103
Multiples of: 5

                   
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