MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSH0076A


100V 308A 2.2mΩ@10V,30A 430W 4V@250uA null TO-263 MOSFETs ROHS
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HUASHUO 433
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AUD 1.9297
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IXTQ50N25T


250V 50A 400W 60mO@10V,25A N Channel TO-3P-3 MOSFETs ROHS
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IXYS 433
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AUD 3.9241
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50 A250 V60 mOhmsN - Channel 5 V- 55 C+ 150 C400 WThrough HoleTO - 3P - 3TubeSi1 Channel30 V78 nCEnhancement Hiperfet
IXFB100N50P


MOSFET 100 Amps 500V 0.05 Ohms Rds
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IXYS 433
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AUD 42.5388
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100 A500 V49 mOhmsn - channel 5 V- 55 C+ 150 C1.25 kWthrough holePLUS - 264 - 3Tubesi1 channel30 V240 nCenhancement polarhv, hiperfet
TSA40N20M


TO-3P MOSFETs ROHS
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Truesemi 432
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AUD 0.9605
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FDS5672


Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
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ON Semiconductor 432
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AUD 1.3806
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12 A60 V8.8 mOhmsN - Channel 2 V- 55 C+ 150 C2.5 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V45 nCEnhancement PowerTrench
IXTA28P065T


MOSFET 28 Amps 65V 0.045 Rds
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IXYS 432
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AUD 2.5776
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28 A65 V45 mOhmsp - channel  - 55 C+ 150 C83 Wsmd/smtTO - 263 - 3Tubesi1 channel15 V    
NTHL065N65S3HF


N-Channel 650 V 46A (Tc) 337W (Tc) Through Hole TO-247-3
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ON Semiconductor 432
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AUD 12.1493
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46 A650 V65 mOhmsN - Channel 5 V- 55 C+ 150 C337 WThrough HoleTO - 247 - 3 Si1 Channel- 30 V , + 30 V98 nCEnhancement  
MOT3650J


30V 6A 2W 1PCSNChannel+1PCSPChannel PDFN3x3 MOSFETs ROHS
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MOT 431
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AUD 0.1173
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IPD082N10N3G


MOSFET N Trench 100V 80A 3.5V @ 75uA 8.6 mΩ @ 73A,10V TO-252-2 (DPAK) RoHS
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Infineon 414
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AUD 2.3109
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FH3030G6


PDFN-8(3.3x3.3) MOSFETs ROHS
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Xinfeihong 407
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AUD 0.0544
Multiples of: 5

                   
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