MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUP57N20-33-E3


N-Channel 200 V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB
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Vishay 921
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AUD 2.9237
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57 A200 V27 mOhmsN - Channel 2 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V130 nCEnhancement TrenchFET
AUIRL1404ZSTRL


MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
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Infineon 436
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AUD 3.4748
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180 A40 V5.9 mOhmsN - Channel  - 55 C 200 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V75 nCEnhancementAec - Q101 
SIHG100N65E-GE3


MOSFETs N-CHANNEL 650V
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Vishay 436
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AUD 3.891
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SIHG055N65E-GE3


MOSFETs N-CHANNEL 650V
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Vishay 436
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AUD 6.091
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47 A650 V58 mOhmsN - Channel 5 V- 55 C+ 150 C312 WThrough HoleTO - 247AC - 3 Si1 Channel+ 30 V108 nCEnhancement  
HUF75345G3


MOSFET 75a 55V 0.007Ohm NCh UltraFET
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ON Semiconductor 436
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AUD 6.7478
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75 A55 V7 mOhmsN - Channel  - 55 C+ 175 C325 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Ultrafet
NSF060120L4A0Q


MOSFETs NSF060120L4A0/SOT8071/TO247-4L
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Nexperia 436
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AUD 8.7836
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           Reel , Cut TapeSi      
FCH085N80_F155


MOSFET SuperFET2 800V
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ON Semiconductor 436
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AUD 25.2817
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46 A800 V67 mOhmsN - Channel 2.5 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 3BulkSi1 Channel+/- 20 V255 nCEnhancement  
KNY6610A


DFN(5x6) MOSFETs ROHS
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KIA 435
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AUD 0.2454
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WMS10DN04TS


Transistor: N-MOSFET x2; unipolar; SOP8
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Wayon 435
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AUD 0.3051
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FCH023N65S3L4


MOSFET 650V N-Channel SuperFET III MOSFET
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ON Semiconductor 10
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AUD 21.9433
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75 A650 V19.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C595 WThrough HoleTO - 247 - 4TubeSi1 Channel+/- 30 V222 nCEnhancement Superfet Iii
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