MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF5210STRLPBF


TO-263 MOSFETs ROHS
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TECH PUBLIC 444
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 1.0854

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IPP076N12N3 G


MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3
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Infineon 439
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 2.7929

Multiples of: 1

100 A120 V7.6 mOhmsN - Channel 3 V- 55 C+ 175 C188 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V76 nC  Optimos
IRFS9N60ATRRPBF


Vishay Semiconductors MOSFET N-Chan 600V 9.2 Amp
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Vishay 439
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 2.8896

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9.2 A600 V750 mOhmsN - Channel30 V - 55 C+ 150 C170 WSmd/SmtD2PAK - 3ReelSi   Enhancement  
IPI60R099CP


MOSFET COOL MOS N-CH 600V 0.099Ohms
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Infineon 439
Ships to you
between Thu. 06 Aug to Mon. 10 Aug
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AUD 5.5821

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31 A600 V99 mOhmsN - Channel20 V - 55 C+ 150 C255 WThrough HoleI2PAK - 3TubeSi1 Channel20 V Enhancement Coolmos
AGM1405C1


40V 130A 3m@10V,20A 105W 2.8V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
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AGM-Semi 438
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 0.7

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FQP3N80C


N-Channel 800 V 3A (Tc) 107W (Tc) Through Hole TO-220-3
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ON Semiconductor 438
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 1.1591

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3 A800 V4.8 OhmsN - Channel  - 55 C+ 150 C107 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Qfet
STP7LN80K5


MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220 package
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STMicroelectronics 438
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 1.4513

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5 A800 V1.15 Ohmsn - channel 3 V- 55 C+ 150 C85 Wthrough holeTO - 220 - 3 si1 channel+/- 30 V12 nCenhancement mdmesh
IXFP80N25X3


MOSFET 250V/80A Ultra Junct ion X3-Class MOSFET
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IXYS 438
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between Thu. 06 Aug to Mon. 10 Aug
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AUD 9.7851

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80 A250 V13 mOhmsN - Channel 2.5 V- 55 C+ 150 C390 WThrough HoleTO - 220AB - 3TubeSi1 Channel20 V83 nCEnhancement Hiperfet
IRFU220PBF


N-Channel 200 V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 428
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between Fri. 31 Jul to Thu. 06 Aug
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AUD 0.6979

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   N Channel      IPAKTube       
FQD11P06TM


60V 30A 61mO@10V,30A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 399
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between Fri. 14 Aug to Wed. 19 Aug
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AUD 0.5851

Multiples of: 1

                   
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