MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JMSH1552AK


TO-252-2 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

JieJie 456
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AUD 0.4391
Multiples of: 1

                   
IPP77N06S212AKSA2


Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
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Infineon 454
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AUD 1.8552
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            Optimos      
IPP60R040C7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
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Infineon 454
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AUD 12.577
Multiples of: 1

            Coolmos C7      
BUK9Q7R0-40HJ


MOSFETs BUK9Q7R0-40H/SOT8002/MLPAK33
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Nexperia 453
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AUD 0.253
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62 A40 V7 mOhmsN - Channel 2.05 V- 55 C+ 175 C53 WSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel20 V23 nCEnhancement  
NTMFS6H858NLT1G


MOSFETs Power MOSFET 80V, 30A, 19.5 mOhm, Single N-Channel, SO8-FL.
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ON Semiconductor 453
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AUD 0.4728
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30 A80 V25 mOhmsN - Channel 2 V- 55 C+ 175 C42 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
RFD16N06LESM9A


Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
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ON Semiconductor 453
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AUD 0.9795
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   N Channel               
STB16NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK
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STMicroelectronics 452
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AUD 0.8693
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            Supermesh      
IXTQ130N10T


N-Channel 100 V 130A (Tc) 360W (Tc) Through Hole TO-3P
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IXYS 451
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AUD 3.4401
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130 A100 V8.5 mOhmsN - Channel  - 55 C+ 175 C360 WThrough HoleTO - 3P - 3TubeSi1 Channel  Enhancement  
IXTH02N250


MOSFET High Voltage Power MOSFET; 2500V, 0.2A
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IXYS 450
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AUD 21.2284
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200 mA2.5 kV450 Ohmsn - channel 2.5 V- 55 C+ 150 C83 Wthrough holeTO - 247 - 3 si1 channel10 V7.4 nCenhancement  
RD3P05BATTL1


MOSFETs RD3P05BAT is a low on-resistance power MOSFET suitable for switching applications.
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ROHM 396
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AUD 2.003
Multiples of: 1

           Reel , Cut TapeSi      
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