MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMNR89-25YLEX


MOSFETs PSMNR89-25YLE/SOT669/LFPAK
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Nexperia 472
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AUD 1.5269
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270 A25 V980 uOhmsN - Channel 2.2 V- 55 C+ 175 C224 WSMD/SMTPOWER SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V33 nCEnhancement  
CDMSJ22010-650 SL


MOSFETs 10A,650V Through-Hole MOSFET N-Channel Super Junction T/L
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Central Semiconductor 472
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AUD 2.0687
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10 A650 V390 mOhmsN - Channel 4 V- 55 C+ 150 C29.5 WThrough HoleTO - 220FP - 3TubeSi1 Channel- 30 V , + 30 V19 nCEnhancement  
PSMN2R3-80SSFJ


MOSFETs PSMN2R3-80SSF/SOT1235/LFPAK88
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Nexperia 472
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AUD 3.4313
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240 A80 V2.3 mOhmsN - Channel 4 V- 55 C+ 175 C341 WSMD/SMTSOT - 1235 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V123 nCEnhancement  
IRFPG40PBF


N-Channel 1000 V 4.3A (Tc) 150W (Tc) Through Hole TO-247AC
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Vishay 472
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AUD 3.5098
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         Through HoleTO - 247 - 3TubeSi      
PSMN3R5-80ES,127


MOSFET N-Ch 80V 3.5 mOhms
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Nexperia 472
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AUD 5.4571
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120 A80 V3.5 mOhmsn - channel 3 V- 55 C+ 175 C338 Wthrough holeTO - 262 - 3Rail/Tubesi1 channel20 V135 nCenhancement  
IPDQ60R040S7AXTMA1


MOSFETs Y
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Infineon 472
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AUD 7.5194
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14 A600 V40 mOhmsN - Channel 4.5 V- 40 C+ 150 C272 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V83 nCEnhancement CoolMOS
R6086YNZ4C13


MOSFETs N CH 600V TO-247G FAST SWTCH
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ROHM 472
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AUD 11.197
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           TubeSi      
KND3903A


TO-252 MOSFETs ROHS
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KIA 471
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AUD 0.2513
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NCEP15T14D


150V 140A 5.6mO@10V,70A 340W N Channel TO-263 MOSFETs ROHS
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NCE Power 441
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AUD 2.6871
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BSC016N06NS


Infineon Technologies MOSFET N-Ch 60V 100A DSON-8 OptiMOS
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Infineon 12
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AUD 1.2398
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100 A60 V1.6 mOhmsN - Channel 2.1 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel10 V71 nCEnhancement Optimos
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