MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP034N03LGXKSA1


Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO220-3
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Infineon 475
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AUD 1.2638
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            Optimos 3      
FQPF19N20C


MOSFET 200V N-Channel Advance Q-FET
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ON Semiconductor 475
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AUD 1.2785
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19 A200 V170 mOhmsN - Channel  - 55 C+ 150 C43 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement Qfet
ZXMP3A16DN8TA


MOSFET Dl 30V P-Chnl UMOS
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Diodes Incorporated 475
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AUD 1.3411
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5.5 A30 V45 mOhmsP - Channel  - 55 C+ 150 C2.1 WSmd/SmtSOIC - 8ReelSi2 Channel20 V Enhancement  
FQI27N25TU


Fairchild Semiconductor MOSFET 250V N-Channel QFET
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ON Semiconductor 475
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AUD 2.0821
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25.5 A250 V110 mOhmsn - channel30 V - 55 C+ 150 C3.13 Wthrough holeI2PAK - 3Tubesi1 channel30 V enhancement  
FDPF035N06B-F154


MOSFET FET 60V 3.5 MOHM TO220F
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ON Semiconductor 475
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AUD 2.4299
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88 A60 V3.5 mOhmsN - Channel 4 V- 55 C+ 175 C46.3 WThrough Hole TubeSi1 Channel- 20 V , + 20 V76 nCEnhancement  
PSMN013-100ES,127


MOSFET Single NChannel 100V 272A 170W 30mOhms
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Nexperia 475
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AUD 2.4487
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47 A90 V30 mOhmsn - channel 3 V  170 Wthrough holeTO - 262 - 3Rail/Tubesi1 channel20 V enhancement  
SPA17N80C3XK


Infineon Technologies MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3
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Infineon 475
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AUD 3.8333
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17 A800 V290 mOhmsN - Channel 2.1 V- 55 C+ 150 C42 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V177 nCEnhancement  
IPP65R110CFDAAKSA1


MOSFET N-Ch 650V 31.2A TO220-3
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Infineon 475
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AUD 6.1319
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31.2 A650 V110 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Coolmos
IPI051N15N5AKSA1


MOSFET TRENCH >=100V
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Infineon 475
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AUD 7.3016
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 150 V N - Channel     Through HoleTO - 262 - 3TubeSi     Optimos
NTP125N65S3H


MOSFET SUPERFET3 FAST 125MOHM TO-220
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ON Semiconductor 474
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AUD 5.0075
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24 A650 V125 mOhmsN - Channel 4 V- 55 C+ 150 C171 WThrough HoleTO - 222 - 3TubeSi1 Channel- 30 V , + 30 V44 nCEnhancement  
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